一种栅网磁控溅射蒸铪的方法

Grid mesh magnetron sputtering hafnium evaporation method

Abstract

The invention discloses a grid mesh magnetron sputtering hafnium evaporation method. The grid mesh magnetron sputtering hafnium evaporation method of the invention comprises the following steps of: ionizing argon in a vacuum chamber by magnetron sputtering to generate magnetron abnormal glow discharge, prolonging the motion distance and increasing speed of argon ions by a magnetron cathode, bombarding the surface of a cathode hafnium target to sputter hafnium atoms on the target and depositing the hafnium atoms on the surface of a grid mesh to form a thin film. The method has strong operability, and can prepare the compact and uniform hafnium film with thickness of 1 to 3 microns on the grid mesh; and after the hafnium film is deposited on the grid mesh, the grid discharge can be greatly reduced, the grid current does not produce sudden change along with the enlargement of a work ratio, and the working stability of a traveling wave tube can be increased.
本发明公开了一种栅网磁控溅射蒸铪方法,本发明所述的栅网磁控溅射蒸铪方法通过磁控溅射,在真空室内使氩气电离,产生磁控型异常辉光放电,氩离子被磁控阴极延长运动距离和加速,并轰击阴极铪靶材表面,将靶材上的铪原子溅射出来沉积在栅网表面形成薄膜,本方法可操作性强,可以在栅网上制备成致密、均匀、膜层厚度达到1~3微米的铪膜,栅网沉积铪膜后,可以大幅度降低栅放,且随着工作比的加大栅流不发生突变,可以增加行波管工作的稳定性能。

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    CN-102184821-BApril 17, 2013南京三乐电子信息产业集团有限公司一种毫米波行波管的栅网的制备方法
    CN-103774092-AMay 07, 2014厦门大学一种在镁合金表面制备导电且耐腐蚀涂层的方法