存储器和写入控制方法

Memory and write control method

Abstract

The present invention provides a memory and a write control method. The memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.
本发明提供了存储器和写入控制方法,该存储器包括:存储器件,具有:存储层,将数据存储为磁体的磁化状态,以及磁化固定层,其磁化方向通过介于存储层与磁化固定层之间的非磁性层而固定,并且该存储器件通过当施加沿存储层和磁化固定层的堆叠方向流动的写入电流时改变存储层的磁化方向,来将数据存储在存储层中;以及电压控制单元,通过使用由两个以上的独立脉冲序列而构成的写入电压,而将由两个以上的独立脉冲序列构成的写入电流提供给该存储器件。

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